PART |
Description |
Maker |
2SJ549 2SJ549L 2SJ549S |
Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
|
HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
|
HAT1047R HAT1047RJ |
Transistors>Switching/MOSFETs Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
HAT2215R HAT2215R-EL-E HAT2215RJ HAT2215RJ-EL-E |
Transistors>Switching/MOSFETs Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
FS10UM-12 |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE DC SWITCHING POWER SUPPLY PROGRAMMABLE 1-40VDC 0-5A
|
Mitsubishi Electric Corporation Powerex Power Semiconductors
|
GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT15Q101 E001909 |
Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体 N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) From old datasheet system N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
|
http:// Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
MP4403 E002514 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING From old datasheet system
|
Toshiba
|
MP4201 E002500 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING From old datasheet system
|
Toshiba
|
387216702 |
9.53 [.375] SR BTS ASY, INSUL. FT, W/MTG
|
Molex Electronics Ltd.
|
MP4020 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|